Manufacturer Part Number
NGTB10N60R2DT4G
Manufacturer
onsemi
Introduction
High-performance IGBT transistor for power electronics applications
Product Features and Performance
600V Collector-Emitter Voltage
20A Collector Current
72W Power Rating
Fast Switching Speed with 90ns Reverse Recovery Time
Low Saturation Voltage of 2.1V @ 10A
Low Gate Charge of 53nC
Product Advantages
Excellent Efficiency and Thermal Performance
Compact DPAK Surface Mount Package
RoHS Compliant
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 600V
Current Collector (Ic) (Max): 20A
Power Max: 72W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
Reverse Recovery Time (trr): 90ns
Quality and Safety Features
ROHS3 Compliant
Compatibility
Compatible with a wide range of power electronic applications
Application Areas
Power Supplies
Motor Drives
Inverters
Welding Equipment
Industrial Controls
Product Lifecycle
Active product, no discontinuation planned
Replacement and upgrade options available
Key Reasons to Choose This Product
High Efficiency and Thermal Performance
Fast Switching Speed
Low Saturation Voltage
Compact Surface Mount Package
RoHS Compliance
NGTB15N60R2FGonsemiIGBT 600V 24A TO220F-3FS
NGTB15N60S1EGonsemiIGBT 600V 30A 117W TO220-3