Manufacturer Part Number
NGTB03N60R2DT4G
Manufacturer
onsemi
Introduction
High-Performance N-Channel IGBT Transistor
Product Features and Performance
Power rating up to 49W
Collector-emitter breakdown voltage of 600V
Collector current (max) of 9A
Low V_CE(on) of 2.1V at 15V, 3A
Fast reverse recovery time of 65ns
Low gate charge of 17nC
Pulse collector current (max) of 12A
Fast switching speeds with typical turn-on/off delays of 27ns/59ns
Product Advantages
Efficient power conversion and control
Reliable high-voltage operation
Compact surface-mount package
Optimized for high-frequency switching applications
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 600V
Current Collector (Ic) (Max): 9A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
Reverse Recovery Time (trr): 65ns
Gate Charge: 17nC
Current Collector Pulsed (Icm): 12A
Switching Energy: 50J (on), 27J (off)
Td (on/off) @ 25°C: 27ns/59ns
Quality and Safety Features
ROHS3 Compliant
Operating Temperature up to 175°C
Compatibility
TO-252-3, DPak (2 Leads + Tab), SC-63 package
Surface mount configuration
Application Areas
High-frequency power conversion
Motor drives
Inductive load switching
Uninterruptible power supplies (UPS)
Welding equipment
Industrial automation
Renewable energy systems
Product Lifecycle
Current product offering
No plans for discontinuation
Replacements and upgrades available as needed
Key Reasons to Choose This Product
High power density and efficiency
Reliable high-voltage operation
Fast switching for high-frequency applications
Compact and thermally efficient surface-mount package
Broad industrial and renewable energy applications