NCP5109BDR2G - onsemi

Manufacturer Part Number

NCP5109BDR2G

Manufacturer

onsemi

Introduction

The NCP5109BDR2G is a high-performance Power Management Integrated Circuit (PMIC) Gate Driver specifically designed to drive IGBTs and N-Channel MOSFETs in a half-bridge configuration.

Product Features and Performance

Supports half-bridge driven configuration

Capable of independently controlling two drivers

Compatible with IGBT and N-Channel MOSFET gate types

Supports a supply voltage range of 10V to 20V

Non-inverting input type

Maximum high side voltage for bootstrap is up to 200V

Features quick rise and fall times of 85ns and 35ns respectively

Operates efficiently within a temperature range of -40°C to 125°C

Product Advantages

Enhanced efficiency for power management tasks

Reliable performance in varying temperature conditions

Compact 8-SOIC package allows for space-saving designs

Key Technical Parameters

Number of Drivers: 2

Logic Voltage VIL, VIH: 0.8V, 2.3V

Current Peak Output (Source, Sink): 250mA, 500mA

High Side Voltage Max (Bootstrap): 200V

Rise / Fall Time (Typical): 85ns, 35ns

Operating Temperature: -40°C to 125°C

Quality and Safety Features

Stable operation within specified temperature and voltage ranges

Rigorous testing ensures reliability under various conditions

Compatibility

Suitable for applications requiring IGBT and N-Channel MOSFET driving capabilities

Application Areas

Power supply units

Motor controllers

High-power switching applications

Product Lifecycle

Currently active product status

Not nearing discontinuation; long-term availability ensured

Several Key Reasons to Choose This Product

Dual independent driver functionality increases design flexibility

High bootstrap voltage capacity of up to 200V supports wide application use

Efficient thermal management ensures operation in extreme conditions

Compact size aids in designing space-efficient solutions

Reliable source and sink current capabilities enhance overall device performance