NCP5106BDR2G - onsemi

Manufacturer Part Number

NCP5106BDR2G

Manufacturer

onsemi

Introduction

Power Management IC for efficient Half-Bridge Gate Driving

Product Features and Performance

Drives IGBT and N-Channel MOSFET Gates

Dual Independent Drivers

Supply Voltage Range 10V ~ 20V

Non-Inverting Inputs

High Side Bootstrap Voltage up to 600V

Peak Output Current 250mA Source, 500mA Sink

Fast Rise and Fall Times (85ns/35ns Typical)

Wide Operating Temperature Range (-40°C ~ 125°C)

Product Advantages

High-Efficiency Power Conversion

Low Propagation Delays

High-Voltage Support for HV Applications

Integrates Two Drivers for Compact Designs

Key Technical Parameters

Number of Drivers: 2

Voltage - Supply: 10V ~ 20V

Logic Voltage - VIL, VIH: 0.8V, 2.3V

Current - Peak Output: 250mA Source, 500mA Sink

High Side Voltage - Max: 600V

Operating Temperature: -40°C to 125°C

Quality and Safety Features

Thermal Shutdown

Under Voltage Lockout (UVLO)

High Current Capability for Robust Performance

Industry Standard Certifications

Compatibility

Suitable for Half-Bridge Topologies

Compatible with IGBT and N-Channel MOSFETs

Application Areas

AC-DC Converters

DC-DC Converters

Motor Drives

Power Supplies

Inverters

Product Lifecycle

Active Product

Supported by Ongoing Manufacturer Updates

Several Key Reasons to Choose This Product

Affords Simplified Circuit Architecture

Assists in Achieving High Power Efficiency

Suited for High Power and High Voltage Applications

Enables Compact and Cost-Effective System Design

Provides Functionality Critical for Industrial and Automotive Systems

Supported by onsemi's Commitment to Quality and Long-Term Availability