NCP5111DR2G - onsemi

Manufacturer Part Number

NCP5111DR2G

Manufacturer

onsemi

Introduction

The NCP5111 is a high-voltage gate driver designed for high-speed driving of power MOSFETs and IGBTs.

Product Features and Performance

Integrated bootstrap diode

High current drive capability of 250mA source and 500mA sink

Fast propagation delays and rise/fall times for high-frequency operation

Under-voltage lockout for VCC and VBST

Compatible with 3.3V / 5V logic inputs

Product Advantages

High-voltage range up to 600V for high-power applications

Dual independent driver channels for half-bridge configurations

Synchronous operation ability for increased efficiency

Built-in dead-time for shoot-through protection

Key Technical Parameters

Driven Configuration: Half-Bridge

Channel Type: Synchronous

Number of Drivers: 2

Gate Type: IGBT, N-Channel MOSFET

Voltage - Supply: 10V to 20V

Logic Voltage - VIL, VIH: 0.8V, 2.3V

Current - Peak Output (Source, Sink): 250mA, 500mA

High Side Voltage - Max (Bootstrap): 600 V

Rise / Fall Time (Typ): 85ns / 35ns

Operating Temperature: -40°C to 125°C (TJ)

Quality and Safety Features

Built with under-voltage lockout features

High-side and low-side over-current protection

Compatibility

Compatible with various IGBTs and N-Channel MOSFETs in half-bridge configurations

Support for 3.3V and 5V logic interfaces

Application Areas

Switching power supplies

Motor control circuits

DC-AC inverters for renewable energy systems

High-frequency power converters

Product Lifecycle

Product Status: Active

Not reported as nearing discontinuation

Should confirm periodically for any updates on the lifecycle

Several Key Reasons to Choose This Product

Optimized for high-efficiency power management applications

Robust thermal performance for reliability under extended operation

Ease of integration with existing power circuit designs

Available in space-saving 8-SOIC package for compact applications

Supports high-frequency operation enabling compact and efficient designs