Manufacturer Part Number
NCP5109ADR2G
Manufacturer
onsemi
Introduction
Power Management IC for driving IGBTs and N-Channel MOSFETs
Product Features and Performance
Independent half-bridge gate driver
Dual channel configuration
Can drive IGBT and N-Channel MOSFET gates
Supply voltage range from 10V to 20V
Non-inverting input type
High side voltage up to 200V (Bootstrap)
Product Advantages
Efficient power consumption
Compact 8-SOIC packaging for space-sensitive applications
Integrated under-voltage lockout (UVLO) feature
Extended operating temperature range from -40°C to 125°C
Key Technical Parameters
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Peak Output Current (Source, Sink): 250mA, 500mA
Rise Time (Typ): 85ns
Fall Time (Typ): 35ns
High Side Voltage - Max (Bootstrap): 200V
Quality and Safety Features
Under-voltage lockout (UVLO)
Extended thermal performance range
Compatibility
Suitable for driving IGBT and N-Channel MOSFET gates
Application Areas
Motor control
Power supplies
Inverters
Switching power amplifiers
Product Lifecycle
Active status
No indication of nearing discontinuation
Reasons to Choose This Product
High-reliability IC suitable for harsh environments
Supports a wide range of power applications
Low propagation delays for fast switching
Robust thermal performance for improved system reliability
Surface mountable for efficient PCB design
Available in Tape & Reel for automated manufacturing processes