Manufacturer Part Number
NCP5104DR2G
Manufacturer
onsemi
Introduction
The NCP5104DR2G is a high-performance gate driver designed for controlling IGBT and N-Channel MOSFET configurations in half-bridge structures. This component is essential for efficient power management in various applications.
Product Features and Performance
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Voltage Supply Range: 10V 20V
Logic Voltage VIL, VIH: 0.8V, 2.3V
Peak Output Current (Source, Sink): 250mA, 500mA
Input Type: Non-Inverting
High Side Voltage Max (Bootstrap): 600V
Rise Time: 85ns
Fall Time: 35ns
Operating Temperature Range: -40°C to 125°C
Product Advantages
Suitable for synchronous half-bridge topologies
Can drive both IGBT and N-Channel MOSFETs
Supports high side voltages up to 600V
Fast rise and fall times for improved switching efficiency
Key Technical Parameters
Supply Voltage: 10V ~ 20V
Output Current: 250mA Source, 500mA Sink
High Side Voltage (Bootstrap): 600V Maximum
Operating Temperature: -40°C ~ 125°C
Quality and Safety Features
Operates reliably across a broad temperature range from -40°C to 125°C
Robust against voltage fluctuations within the supply range
Compatibility
Compatible with IGBT and N-Channel MOSFET type gates
Application Areas
Inverter systems
SMPS (Switched-Mode Power Supplies)
Motor drives
Power management modules
Product Lifecycle
Status: Active
Not nearing discontinuation
Availability of replacements or upgrades acting as current technology sustenance
Several Key Reasons to Choose This Product
Versatile usability with both IGBT and N-channel MOSFET gate types
Broad operating temperature range makes it suitable for harsh environments
High bootstrap voltage capacity of up to 600V allows use in high voltage applications
Quick response times (85ns rise, 35ns fall) enhance the efficiency of switching applications