MUN2114T1 - onsemi

Manufacturer Part Number

MUN2114T1

Manufacturer

onsemi

Introduction

The MUN2114T1 is a pre-biased PNP bipolar junction transistor (BJT) in a surface-mount SC-59 package.

Product Features and Performance

Power rating of 230 mW

Collector-emitter breakdown voltage (VCEO) of 50 V

Collector current (IC) of up to 100 mA

Collector cutoff current (ICBO) of 500 nA max

Collector-emitter saturation voltage (VCE(SAT)) of 250 mV at 10 mA collector current

DC current gain (hFE) of at least 80 at 5 mA collector current and 10 V collector-emitter voltage

Integrated base resistor (R1) of 10 kΩ

Integrated emitter-base resistor (R2) of 47 kΩ

Product Advantages

Pre-biased design simplifies circuit design

Surface-mount packaging for compact and efficient assembly

Robust construction for reliable operation

Key Technical Parameters

Power rating: 230 mW

Collector-emitter breakdown voltage (VCEO): 50 V

Collector current (IC): 100 mA

Collector cutoff current (ICBO): 500 nA

Collector-emitter saturation voltage (VCE(SAT)): 250 mV

DC current gain (hFE): Minimum 80

Base resistor (R1): 10 kΩ

Emitter-base resistor (R2): 47 kΩ

Quality and Safety Features

RoHS non-compliant

Meets applicable safety and quality standards

Compatibility

Surface-mount TO-236-3, SC-59, SOT-23-3 package

Suitable for use in a variety of electronic circuits and applications

Application Areas

Biasing and signal conditioning

Switching and amplification

Audio and control circuits

Product Lifecycle

The MUN2114T1 is an active product, with no indication of near discontinuation.

Replacements and upgrades may be available from onsemi or other manufacturers.

Key Reasons to Choose This Product

Integrated pre-biasing for simplified circuit design

Robust surface-mount packaging for efficient assembly

Wide range of operating parameters to suit diverse applications

Reliable performance and long-term availability from a trusted manufacturer