Manufacturer Part Number
MUN2113T1G
Manufacturer
onsemi
Introduction
The MUN2113T1G is a pre-biased PNP bipolar junction transistor (BJT) in a small SC-59 package.
Product Features and Performance
230 mW power rating
50 V collector-emitter breakdown voltage
100 mA max collector current
500 nA max collector cutoff current
250 mV max collector-emitter saturation voltage
80 min DC current gain
Pre-biased with 47 kOhm base and emitter-base resistors
Product Advantages
Compact SC-59 surface mount package
Pre-biased for simple circuit design
Suitable for low-power analog and switching applications
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 50 V
Current Collector (Ic) (Max): 100 mA
Current Collector Cutoff (Max): 500 nA
Vce Saturation (Max) @ Ib, Ic: 250 mV @ 300 A, 10 mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5 mA, 10 V
Resistor Base (R1): 47 kOhms
Resistor Emitter Base (R2): 47 kOhms
Quality and Safety Features
RoHS3 compliant
Compatibility
TO-236-3, SC-59, SOT-23-3 package compatible
Application Areas
Suitable for low-power analog and switching applications, such as:
- Biasing circuits
- Amplifier circuits
- Switch driver circuits
Product Lifecycle
Currently in production
No plans for discontinuation
Several Key Reasons to Choose This Product
Compact SC-59 surface mount package
Pre-biased for simple circuit design
Suitable for low-power analog and switching applications
RoHS3 compliant
Currently in production with no plans for discontinuation