MUN2132T1 - onsemi

Manufacturer Part Number

MUN2132T1

Manufacturer

onsemi

Introduction

Discrete Semiconductor Transistors

Bipolar Junction Transistors (BJT) Single, Pre-Biased

Product Features and Performance

RoHS non-compliant

Packaging: SC-59

Base Product Number: MUN2132

Package / Case: TO-236-3, SC-59, SOT-23-3

Supplier Device Package: SC-59

Package: Tape & Reel (TR)

Power Max: 230 mW

Voltage Collector Emitter Breakdown (Max): 50 V

Current Collector (Ic) (Max): 100 mA

Current Collector Cutoff (Max): 500nA

Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA

Transistor Type: PNP Pre-Biased

DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V

Resistor Base (R1): 4.7 kOhms

Resistor Emitter Base (R2): 4.7 kOhms

Mounting Type: Surface Mount

Product Advantages

Pre-Biased transistor for simplified circuit design

Compact SC-59 package for space-constrained applications

Key Technical Parameters

Power Rating: 230 mW

Collector-Emitter Breakdown Voltage: 50 V

Collector Current (Max): 100 mA

DC Current Gain: 15 (min)

Base and Emitter-Base Resistor Values: 4.7 kOhms

Quality and Safety Features

RoHS non-compliant

Compatibility

Compatible with TO-236-3, SC-59, and SOT-23-3 package types

Application Areas

Suitable for use in various electronic circuits and systems

Product Lifecycle

Current production model, no indication of impending discontinuation

Replacements and upgrades may be available from onsemi

Key Reasons to Choose

Pre-biased transistor design simplifies circuit implementation

Compact SC-59 package for space-constrained applications

Robust technical specifications, including high power rating and voltage capability

Widespread compatibility with common package types