Manufacturer Part Number
MUN2132T1
Manufacturer
onsemi
Introduction
Discrete Semiconductor Transistors
Bipolar Junction Transistors (BJT) Single, Pre-Biased
Product Features and Performance
RoHS non-compliant
Packaging: SC-59
Base Product Number: MUN2132
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59
Package: Tape & Reel (TR)
Power Max: 230 mW
Voltage Collector Emitter Breakdown (Max): 50 V
Current Collector (Ic) (Max): 100 mA
Current Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Transistor Type: PNP Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Resistor Base (R1): 4.7 kOhms
Resistor Emitter Base (R2): 4.7 kOhms
Mounting Type: Surface Mount
Product Advantages
Pre-Biased transistor for simplified circuit design
Compact SC-59 package for space-constrained applications
Key Technical Parameters
Power Rating: 230 mW
Collector-Emitter Breakdown Voltage: 50 V
Collector Current (Max): 100 mA
DC Current Gain: 15 (min)
Base and Emitter-Base Resistor Values: 4.7 kOhms
Quality and Safety Features
RoHS non-compliant
Compatibility
Compatible with TO-236-3, SC-59, and SOT-23-3 package types
Application Areas
Suitable for use in various electronic circuits and systems
Product Lifecycle
Current production model, no indication of impending discontinuation
Replacements and upgrades may be available from onsemi
Key Reasons to Choose
Pre-biased transistor design simplifies circuit implementation
Compact SC-59 package for space-constrained applications
Robust technical specifications, including high power rating and voltage capability
Widespread compatibility with common package types
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