Manufacturer Part Number
MUN2132T1G
Manufacturer
onsemi
Introduction
The MUN2132T1G is a pre-biased PNP bipolar junction transistor (BJT) in a small surface-mount SC-59 package.
Product Features and Performance
Suitable for low-power analog and digital applications
Pre-biased for easy implementation in circuits
Transistor characteristics optimized for low-voltage, low-current operation
Collector-emitter breakdown voltage of 50V
Collector current up to 100mA
Low collector-emitter saturation voltage
Product Advantages
Compact SC-59 surface-mount package
Pre-biased for simplified circuit design
Optimized for low-power, low-voltage operation
Robust performance characteristics
Key Technical Parameters
Power Rating: 230mW
Collector-Emitter Breakdown Voltage: 50V
Collector Current: 100mA
Collector Cutoff Current: 500nA
Collector-Emitter Saturation Voltage: 250mV @ 1mA, 10mA
DC Current Gain (hFE): 15 @ 5mA, 10V
Base Resistor: 4.7kΩ
Emitter-Base Resistor: 4.7kΩ
Quality and Safety Features
RoHS3 compliant
Suitable for reflow soldering
Compatibility
Designed for surface-mount applications
Compatible with standard TO-236-3, SC-59, SOT-23-3 packages
Application Areas
Low-power analog and digital circuits
Switch mode power supplies
Sensor and control applications
Battery-powered devices
Product Lifecycle
Current product, no discontinuation plans
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Compact surface-mount package
Pre-biased for simplified circuit design
Optimized for low-power, low-voltage operation
Robust performance characteristics
RoHS3 compliance for environmental sustainability
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