Manufacturer Part Number
MUN2111T1G
Manufacturer
onsemi
Introduction
PNP pre-biased bipolar junction transistor (BJT) for general-purpose applications
Product Features and Performance
High voltage rating up to 50V
High collector current up to 100mA
Low collector-emitter saturation voltage of 250mV at 10mA collector current
Integrated base and emitter resistors for pre-biasing
Compact surface-mount SC-59 package
Product Advantages
Simplified circuit design with pre-biased transistor
Reduced component count
Compact size for space-constrained applications
Key Technical Parameters
Power rating: 230mW
Collector-emitter breakdown voltage: 50V
Collector current: 100mA
Collector cutoff current: 500nA
DC current gain: 35 min. at 5mA, 10V
Base and emitter resistor values: 10kOhms
Quality and Safety Features
RoHS3 compliant
Suitable for reflow soldering
Compatibility
Compatible with standard surface-mount assembly processes
Application Areas
General-purpose amplifier and switching circuits
Consumer electronics
Industrial controls
Automotive electronics
Product Lifecycle
This product is currently in production and available
No known plans for discontinuation or replacement
Key Reasons to Choose This Product
Integrated pre-biasing for simplified circuit design
Compact surface-mount package for space-constrained applications
High voltage and current ratings for versatile use
Low saturation voltage for efficient operation
RoHS3 compliance for environmentally-friendly applications