Manufacturer Part Number
MMBT6429LT1G
Manufacturer
onsemi
Introduction
The MMBT6429LT1G is a high-frequency, high-voltage NPN bipolar junction transistor (BJT) in a small SOT-23-3 (TO-236) package.
Product Features and Performance
Operates at high frequencies up to 700 MHz
High voltage rating of 45 V Collector-Emitter Breakdown Voltage
Low Collector-Emitter saturation voltage of 600 mV @ 5 mA, 100 mA
High DC current gain (hFE) of 500 min. @ 100 μA, 5 V
Low Collector Cutoff Current of 100 nA max.
Capable of 225 mW power dissipation
Product Advantages
Excellent high-frequency performance
High voltage and current handling capability
Small, space-saving SOT-23-3 package
RoHS compliant
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 45 V
Current Collector (Ic) (Max): 200 mA
Current Collector Cutoff (Max): 100 nA
Vce Saturation (Max) @ Ib, Ic: 600 mV @ 5 mA, 100 mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 100 μA, 5 V
Frequency Transition: 700 MHz
Quality and Safety Features
RoHS3 compliant
Reliable and durable performance
Compatibility
Compatible with a wide range of electronic circuits and applications
Application Areas
Suitable for use in high-frequency, high-voltage amplifier, switch, and driver circuits
Applicable in consumer electronics, industrial equipment, and telecommunications equipment
Product Lifecycle
The MMBT6429LT1G is an active product and is not nearing discontinuation
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent high-frequency performance up to 700 MHz
High voltage and current handling capability
Low saturation voltage and high current gain for efficient operation
Small, space-saving SOT-23-3 package
RoHS compliance for use in environmentally-conscious applications
Reliable and durable performance