MMBT6429LT1G - onsemi

Manufacturer Part Number

MMBT6429LT1G

Manufacturer

onsemi

Introduction

The MMBT6429LT1G is a high-frequency, high-voltage NPN bipolar junction transistor (BJT) in a small SOT-23-3 (TO-236) package.

Product Features and Performance

Operates at high frequencies up to 700 MHz

High voltage rating of 45 V Collector-Emitter Breakdown Voltage

Low Collector-Emitter saturation voltage of 600 mV @ 5 mA, 100 mA

High DC current gain (hFE) of 500 min. @ 100 μA, 5 V

Low Collector Cutoff Current of 100 nA max.

Capable of 225 mW power dissipation

Product Advantages

Excellent high-frequency performance

High voltage and current handling capability

Small, space-saving SOT-23-3 package

RoHS compliant

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 45 V

Current Collector (Ic) (Max): 200 mA

Current Collector Cutoff (Max): 100 nA

Vce Saturation (Max) @ Ib, Ic: 600 mV @ 5 mA, 100 mA

DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 100 μA, 5 V

Frequency Transition: 700 MHz

Quality and Safety Features

RoHS3 compliant

Reliable and durable performance

Compatibility

Compatible with a wide range of electronic circuits and applications

Application Areas

Suitable for use in high-frequency, high-voltage amplifier, switch, and driver circuits

Applicable in consumer electronics, industrial equipment, and telecommunications equipment

Product Lifecycle

The MMBT6429LT1G is an active product and is not nearing discontinuation

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Excellent high-frequency performance up to 700 MHz

High voltage and current handling capability

Low saturation voltage and high current gain for efficient operation

Small, space-saving SOT-23-3 package

RoHS compliance for use in environmentally-conscious applications

Reliable and durable performance