MMBT6517LT1G - onsemi

Manufacturer Part Number

MMBT6517LT1G

Manufacturer

onsemi

Introduction

Bipolar junction transistor (BJT) in a small surface-mount package

Designed for general-purpose switching and amplification applications

Product Features and Performance

Compact SOT-23-3 package

High collector-emitter breakdown voltage of 350V

Low collector-emitter saturation voltage of 1V @ 5mA, 50mA

High DC current gain of 20 min. @ 50mA, 10V

Wide operating temperature range of -55°C to 150°C

Product Advantages

Suitable for a wide range of general-purpose switching and amplification applications

Compact surface-mount package saves board space

Excellent electrical characteristics for reliable performance

Key Technical Parameters

Collector-Emitter Breakdown Voltage (Max): 350V

Collector Current (Max): 100mA

Collector Cutoff Current (Max): 50nA

DC Current Gain (Min): 20 @ 50mA, 10V

Transition Frequency: 200MHz

Quality and Safety Features

RoHS compliant

Reliable construction and testing for consistent performance

Compatibility

Compatible with standard TO-236 (SOT-23-3) footprint and sockets

Application Areas

General-purpose switching and amplification circuits

Low-power analog and digital circuits

Consumer electronics, industrial controls, and more

Product Lifecycle

Current production part, not nearing discontinuation

Replacements and upgrades available from onsemi

Key Reasons to Choose

Excellent electrical characteristics for reliable performance

Compact surface-mount package for space-constrained designs

Wide operating temperature range for versatile applications

RoHS compliance for environmental responsibility

Availability of replacements and upgrades from the manufacturer