Manufacturer Part Number
MMBT6517LT1G
Manufacturer
onsemi
Introduction
Bipolar junction transistor (BJT) in a small surface-mount package
Designed for general-purpose switching and amplification applications
Product Features and Performance
Compact SOT-23-3 package
High collector-emitter breakdown voltage of 350V
Low collector-emitter saturation voltage of 1V @ 5mA, 50mA
High DC current gain of 20 min. @ 50mA, 10V
Wide operating temperature range of -55°C to 150°C
Product Advantages
Suitable for a wide range of general-purpose switching and amplification applications
Compact surface-mount package saves board space
Excellent electrical characteristics for reliable performance
Key Technical Parameters
Collector-Emitter Breakdown Voltage (Max): 350V
Collector Current (Max): 100mA
Collector Cutoff Current (Max): 50nA
DC Current Gain (Min): 20 @ 50mA, 10V
Transition Frequency: 200MHz
Quality and Safety Features
RoHS compliant
Reliable construction and testing for consistent performance
Compatibility
Compatible with standard TO-236 (SOT-23-3) footprint and sockets
Application Areas
General-purpose switching and amplification circuits
Low-power analog and digital circuits
Consumer electronics, industrial controls, and more
Product Lifecycle
Current production part, not nearing discontinuation
Replacements and upgrades available from onsemi
Key Reasons to Choose
Excellent electrical characteristics for reliable performance
Compact surface-mount package for space-constrained designs
Wide operating temperature range for versatile applications
RoHS compliance for environmental responsibility
Availability of replacements and upgrades from the manufacturer