MMBT6520LT1G - onsemi

Manufacturer Part Number

MMBT6520LT1G

Manufacturer

onsemi

Introduction

The MMBT6520LT1G is a PNP bipolar junction transistor (BJT) from onsemi. It is designed for use in a variety of electronic circuits and applications.

Product Features and Performance

High Collector-Emitter Breakdown Voltage (VCEO): 350V

High Collector Current (IC) Rating: 500mA

Wide Operating Temperature Range: -55°C to 150°C

Low Collector-Emitter Saturation Voltage (VCE(sat)): 1V @ 5mA, 50mA

High Current Gain (hFE): 20 min @ 50mA, 10V

High Transition Frequency (fT): 200MHz

Product Advantages

Robust performance in high-voltage applications

Suitable for use in power amplifiers, switching circuits, and other high-current applications

Compact SOT-23-3 (TO-236) surface-mount package

Key Technical Parameters

Manufacturer Part Number: MMBT6520LT1G

Package: SOT-23-3 (TO-236)

Voltage Collector Emitter Breakdown (Max): 350V

Current Collector (Ic) (Max): 500mA

Current Collector Cutoff (Max): 50nA (ICBO)

Transistor Type: PNP

DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V

Frequency Transition: 200MHz

Quality and Safety Features

RoHS3 Compliant

Manufactured in an ISO-certified facility

Compatibility

This PNP BJT can be used as a replacement or alternative to similar transistor models in various electronic circuits and applications.

Application Areas

Power amplifiers

Switching circuits

Voltage regulators

Audio and video circuits

General-purpose electronic applications

Product Lifecycle

The MMBT6520LT1G is an active and widely available product from onsemi.

Replacement or upgrade options may be available, depending on the specific application requirements.

Key Reasons to Choose This Product

Robust performance in high-voltage applications

Suitable for use in high-current circuits and applications

Compact surface-mount packaging for efficient board layout

Reliable and RoHS-compliant manufacturing

Widespread compatibility and availability