MMBT6428LT1G - onsemi

Manufacturer Part Number

MMBT6428LT1G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT) Single

Product Features and Performance

RoHS3 Compliant

SOT-23-3 (TO-236) Package

Operating Temperature: -55°C to 150°C

Power Dissipation: 225 mW

Collector-Emitter Breakdown Voltage: 50 V

Collector Current: 200 mA

Collector Cutoff Current: 100 nA

Collector-Emitter Saturation Voltage: 600 mV @ 5 mA, 100 mA

DC Current Gain: 250 @ 100 μA, 5 V

Transition Frequency: 700 MHz

Product Advantages

High performance BJT transistor

Compact SOT-23-3 surface mount package

Wide operating temperature range

Low collector-emitter saturation voltage

Key Technical Parameters

Transistor Type: NPN

Packaging: Tape & Reel (TR)

Mounting Type: Surface Mount

Quality and Safety Features

RoHS3 Compliant

Compatibility

Compatible with various electronic circuit applications

Application Areas

Suitable for use in a wide range of electronic circuits and devices

Product Lifecycle

This product is an active and currently available part from the manufacturer.

Key Reasons to Choose This Product

High performance characteristics

Compact and surface mount packaging

Wide operating temperature range

RoHS3 compliance for environmental friendliness

Suitability for a broad range of electronic applications