Manufacturer Part Number
MMBT6427LT1G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Transistors Bipolar (BJT) Single
Product Features and Performance
RoHS3 Compliant
SOT-23-3 (TO-236) package
Operating Temperature: -55°C ~ 150°C (TJ)
Power Max: 225 mW
Voltage Collector Emitter Breakdown (Max): 40 V
Current Collector (Ic) (Max): 500 mA
Current Collector Cutoff (Max): 1A
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500A, 500mA
Transistor Type: NPN Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Product Advantages
RoHS3 compliant for environmental friendliness
SOT-23-3 (TO-236) package for compact size and surface mount design
Wide operating temperature range of -55°C to 150°C
High power handling capacity of 225 mW
High breakdown voltage of 40 V
High collector current capacity of 500 mA
High collector cutoff current of 1A
Low saturation voltage of 1.5V
High DC current gain of 20000
Key Technical Parameters
Operating Temperature Range: -55°C ~ 150°C
Power Capacity: 225 mW
Collector-Emitter Breakdown Voltage: 40 V
Collector Current (Max): 500 mA
Collector Cutoff Current (Max): 1A
Vce Saturation Voltage: 1.5V @ 500A, 500mA
Transistor Type: NPN Darlington
DC Current Gain (Min): 20000 @ 100mA, 5V
Quality and Safety Features
RoHS3 compliant for environmentally-friendly manufacturing
Compatibility
SOT-23-3 (TO-236) package for surface mount design
Application Areas
Suitable for a wide range of electronic circuits and applications requiring a high-performance NPN Darlington transistor
Product Lifecycle
Current product, no plans for discontinuation
Replacement or upgrade options available if required
Key Reasons to Choose This Product
RoHS3 compliance for environmental responsibility
Compact SOT-23-3 (TO-236) package for space-constrained designs
Wide operating temperature range for versatile use
High power handling, voltage, and current capabilities for demanding applications
Low saturation voltage and high DC current gain for efficient operation
Proven reliability and quality from onsemi