MMBT5962 - Fairchild Semiconductor

Manufacturer Part Number

MMBT5962

Manufacturer

Fairchild (onsemi)

Introduction

Discrete Semiconductor Product

Transistors - Bipolar (BJT) - Single

Product Features and Performance

Operating Temperature: -55°C ~ 150°C (TJ)

Power Max: 350 mW

Voltage Collector Emitter Breakdown (Max): 45 V

Current Collector (Ic) (Max): 100 mA

Current Collector Cutoff (Max): 2nA (ICBO)

Vce Saturation (Max) @ Ib, Ic: 200mV @ 500A, 10mA

Transistor Type: NPN

DC Current Gain (hFE) (Min) @ Ic, Vce: 600 @ 10mA, 5V

Mounting Type: Surface Mount

Product Advantages

High power handling capability

Wide operating temperature range

Low saturation voltage

High current gain

Key Technical Parameters

Power Rating: 350 mW

Collector-Emitter Breakdown Voltage: 45 V

Collector Current (Max): 100 mA

DC Current Gain: Minimum 600 @ 10 mA, 5 V

Quality and Safety Features

Reliable performance in a wide range of operating conditions

Compliant with industry safety standards

Compatibility

Suitable for various electronic circuit applications

Application Areas

Amplifier circuits

Switching circuits

Logic circuits

General-purpose NPN transistor applications

Product Lifecycle

This is an actively supported product, with available replacements and upgrades.

Key Reasons to Choose This Product

High power handling and thermal capability

Wide operating temperature range

Low saturation voltage for efficient performance

High current gain for improved circuit performance

Reliable and robust design for industrial and consumer applications