MMBT589LT1G - onsemi

Manufacturer Part Number

MMBT589LT1G

Manufacturer

onsemi

Introduction

The MMBT589LT1G is a single PNP bipolar junction transistor (BJT) in a SOT-23-3 (TO-236) surface mount package, designed for general-purpose amplifier and switching applications.

Product Features and Performance

Wide operating temperature range: -55°C to 150°C

Low collector-emitter saturation voltage: 650 mV @ 200 mA, 2 A

High DC current gain (hFE): 100 min @ 500 mA, 2 V

High transition frequency: 100 MHz

Suitable for surface mount applications

Product Advantages

Compact surface mount package

Reliable performance over a wide temperature range

Optimized for amplifier and switching applications

Key Technical Parameters

Power rating: 310 mW

Collector-emitter breakdown voltage: 30 V

Collector current (max): 1 A

Collector cutoff current (max): 100 nA

Quality and Safety Features

RoHS3 compliant

Manufactured in an ISO-certified facility

Compatibility

The MMBT589LT1G is compatible with a wide range of electronic circuits and systems, particularly those requiring a general-purpose PNP bipolar transistor in a small surface mount package.

Application Areas

Amplifier circuits

Switching circuits

General-purpose electronic applications

Product Lifecycle

The MMBT589LT1G is an active product, with no immediate plans for discontinuation. Replacement or upgrade options may be available from the manufacturer or authorized distributors.

Several Key Reasons to Choose This Product

Reliable performance over a wide temperature range

Optimized for amplifier and switching applications

Compact surface mount package for space-constrained designs

RoHS3 compliance for environmentally-conscious applications

Readily available from the manufacturer and authorized distributors