MMBT489LT1G - onsemi

Manufacturer Part Number

MMBT489LT1G

Manufacturer

onsemi

Introduction

The MMBT489LT1G is a high-performance, general-purpose NPN bipolar junction transistor (BJT) from onsemi.

Product Features and Performance

Designed for a wide range of applications in analog and digital circuits

Capable of high-speed switching and amplification

High current handling capability up to 1A

Wide operating temperature range from -55°C to 150°C

Low collector-emitter saturation voltage of 200mV @ 100mA, 1A

High current gain (hFE) of 300 min. @ 500mA, 5V

High transition frequency of 100MHz

Product Advantages

Reliable and robust construction

Excellent thermal stability

Versatile design for diverse applications

Cost-effective solution for high-volume applications

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 30V (max)

Collector Current (IC): 1A (max)

Collector Cutoff Current (ICBO): 100nA (max)

Power Dissipation: 710mW

Quality and Safety Features

RoHS3 compliant

Meets JEDEC standards for quality and reliability

Qualified for industrial and automotive applications

Compatibility

Compatible with various electronic circuits and systems

Suitable for use in a wide range of analog and digital designs

Application Areas

Amplifiers

Switches

Logic gates

Drivers

Power supplies

Industrial and automotive electronics

Product Lifecycle

The MMBT489LT1G is an actively supported product

Replacements and upgrades are available if needed

Key Reasons to Choose This Product

High-performance and reliable NPN bipolar transistor

Versatile design for a wide range of applications

Excellent thermal stability and power handling capability

Cost-effective solution for high-volume production

Meets industry standards for quality and safety