MMBT4403M3T5G - onsemi

Manufacturer Part Number

MMBT4403M3T5G

Manufacturer

onsemi

Introduction

High-frequency, high-beta, general-purpose PNP bipolar transistor

Product Features and Performance

Capable of operating at high frequencies up to 200 MHz

High DC current gain (hFE) of at least 100 at 150 mA collector current and 2 V collector-emitter voltage

Low collector-emitter saturation voltage (VCE(sat)) of 750 mV at 50 mA collector current and 500 mA base current

Able to handle up to 600 mA of collector current and 265 mW of power dissipation

Product Advantages

Suitable for a wide range of general-purpose amplifier and switching applications

Robust design with surface-mount package for efficient board-level integration

RoHS-compliant and environmentally friendly

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 40 V

Operating Temperature Range: -55°C to 150°C

Packaging: SOT-723 surface-mount package, Tape & Reel

Quality and Safety Features

Manufactured to RoHS3 compliance standards

Robust design for reliable long-term operation

Compatibility

Can be used as a replacement or upgrade for various general-purpose PNP bipolar transistors

Application Areas

Amplifier circuits

Switching circuits

General-purpose electronics

Product Lifecycle

Currently in active production

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

High-frequency and high-gain performance for efficient circuit design

Robust and reliable design for long-term use

Ease of integration with surface-mount package

RoHS compliance for environmentally conscious applications