MMBT4403WT1G - onsemi

Manufacturer Part Number

MMBT4403WT1G

Manufacturer

onsemi

Introduction

The MMBT4403WT1G is a PNP bipolar junction transistor (BJT) in a small surface mount SC-70-3 (SOT323) package. It is designed for general-purpose amplifier and switch applications.

Product Features and Performance

PNP bipolar junction transistor (BJT)

Low power dissipation of 150 mW

High collector-emitter breakdown voltage of 40 V

High collector current rating of 600 mA

Low collector-emitter saturation voltage of 750 mV @ 50 mA, 500 mA

High current gain of 100 @ 150 mA, 2 V

High transition frequency of 200 MHz

Product Advantages

Compact surface mount package

Suitable for general-purpose amplifier and switch applications

Good electrical performance characteristics

RoHS-compliant

Key Technical Parameters

Collector-Emitter Breakdown Voltage (Max): 40 V

Collector Current (Max): 600 mA

Collector-Emitter Saturation Voltage (Max): 750 mV @ 50 mA, 500 mA

DC Current Gain (hFE) (Min): 100 @ 150 mA, 2 V

Transition Frequency: 200 MHz

Power Dissipation (Max): 150 mW

Operating Temperature: -55°C to 150°C

Quality and Safety Features

RoHS3 compliant

Manufactured in an ISO-certified facility

Compatibility

Widely used in general-purpose electronic circuits and applications

Application Areas

Amplifier circuits

Switch circuits

General-purpose electronic devices

Product Lifecycle

The MMBT4403WT1G is an active and commonly available product.

Replacement or upgrade options may be available from the manufacturer or third-party suppliers.

Several Key Reasons to Choose This Product

Compact surface mount package

Good electrical performance characteristics, including high voltage, current, and frequency ratings

Suitable for a wide range of general-purpose electronic applications

RoHS-compliant and manufactured in an ISO-certified facility, ensuring quality and safety