MMBT4403LT1G - onsemi

Manufacturer Part Number

MMBT4403LT1G

Manufacturer

onsemi

Introduction

This is a PNP bipolar junction transistor (BJT) from onsemi, a leading manufacturer of semiconductor products.

Product Features and Performance

Power rating of 300 mW

Collector-emitter breakdown voltage of 40 V

Collector current rating of 600 mA

Gain (hFE) of at least 100 at 150 mA and 2 V

Transition frequency of 200 MHz

Operating temperature range of -55°C to 150°C

Product Advantages

Compact surface-mount package (SOT-23-3)

High power and current handling capabilities

Wide operating temperature range

Robust and reliable performance

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 40 V

Current Collector (Ic) (Max): 600 mA

Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA

Transistor Type: PNP

DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V

Frequency Transition: 200MHz

Quality and Safety Features

RoHS3 compliant

Meets stringent quality and reliability standards

Compatibility

Suitable for a wide range of electronic circuit applications

Application Areas

Suitable for use in various electronic devices and circuits, including amplifiers, switches, and power supplies

Product Lifecycle

This product is currently in active production and is not nearing discontinuation.

Replacements and upgrades may be available from onsemi or other manufacturers.

Key Reasons to Choose This Product

High power and current handling capabilities

Wide operating temperature range

Compact surface-mount package

Robust and reliable performance

Meets stringent quality and safety standards

Compatibility with a wide range of electronic applications