MMBT5087LT1G - onsemi

Manufacturer Part Number

MMBT5087LT1G

Manufacturer

onsemi

Introduction

The MMBT5087LT1G is a PNP bipolar junction transistor (BJT) in a SOT-23-3 surface mount package.

Product Features and Performance

Operating temperature range of -55°C to 150°C

Power rating of 300 mW

Collector-Emitter breakdown voltage (BVCEO) of 50 V

Collector current (IC) of 50 mA

Collector cutoff current (ICBO) of 50 nA

Collector-Emitter saturation voltage (VCE(sat)) of 300 mV at 1 mA, 10 mA

DC current gain (hFE) of 250 minimum at 100 μA, 5 V

Transition frequency (fT) of 40 MHz

Product Advantages

Suitable for high-speed switching and amplifier applications

Compact SOT-23-3 surface mount package

RoHS compliant

Key Technical Parameters

Transistor type: PNP

Package: SOT-23-3 (TO-236)

Power rating: 300 mW

Collector-Emitter breakdown voltage (BVCEO): 50 V

Collector current (IC): 50 mA

Collector cutoff current (ICBO): 50 nA

Collector-Emitter saturation voltage (VCE(sat)): 300 mV @ 1 mA, 10 mA

DC current gain (hFE): 250 min @ 100 μA, 5 V

Transition frequency (fT): 40 MHz

Quality and Safety Features

RoHS compliant

Compatibility

Compatible with standard PNP bipolar junction transistor applications

Application Areas

High-speed switching

Amplifier circuits

General-purpose amplification and switching

Product Lifecycle

This product is currently in production and is not nearing discontinuation.

Replacement or upgrade options are available from onsemi.

Several Key Reasons to Choose This Product

Suitable for high-speed switching and amplifier applications due to the high transition frequency.

Compact SOT-23-3 surface mount package for efficient board space utilization.

RoHS compliance for environmentally-friendly applications.

Wide operating temperature range of -55°C to 150°C, making it suitable for a variety of environments.

Reliable and high-quality performance from a reputable manufacturer, onsemi.