MMBT5089 - onsemi

Manufacturer Part Number

MMBT5089

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT) Single

Product Features and Performance

RoHS3 Compliant

SOT-23-3 Package

Operating Temperature Range: -55°C to 150°C

Power Rating: 350 mW

Collector-Emitter Breakdown Voltage: 25 V

Collector Current (Max): 100 mA

Collector Cutoff Current (Max): 50 nA

Collector-Emitter Saturation Voltage: 500 mV @ 1 mA, 10 mA

DC Current Gain (hFE): Minimum 400 @ 100 μA, 5 V

Transition Frequency: 50 MHz

Product Advantages

High switching speed

Low noise

Reliable performance

Small form factor

Key Technical Parameters

Transistor Type: NPN

Package: TO-236-3, SC-59, SOT-23-3

Mounting Type: Surface Mount

Packaging: Tape & Reel

Quality and Safety Features

RoHS3 Compliant

Reliable design and manufacturing process

Compatibility

Widely compatible with various electronic circuits and applications

Application Areas

General-purpose switching and amplification

Low-power digital and analog circuits

Automotive electronics

Industrial control systems

Product Lifecycle

Current product, no discontinuation planned

Replacements and upgrades available as needed

Key Reasons to Choose This Product

High performance and reliability

Small and compact package

Wide operating temperature range

Compliance with RoHS regulations

Ease of integration and surface mount compatibility