MMBT5179 - Texas Instruments

Manufacturer Part Number

MMBT5179

Manufacturer

Texas Instruments

Introduction

The MMBT5179 is a high-frequency, low-noise NPN bipolar junction transistor (BJT) designed for use in RF amplifier and switching applications.

Product Features and Performance

High frequency operation up to 2GHz

Low noise figure of 5dB at 200MHz

High current gain of 25 at 3mA and 1V

Compact surface mount SOT-23-3 package

Product Advantages

Excellent high-frequency performance

Low noise characteristics

High current gain

Small and efficient surface mount package

Key Technical Parameters

Operating Temperature Range: -55°C to 150°C

Maximum Power Dissipation: 225mW

Collector-Emitter Breakdown Voltage: 12V

Maximum Collector Current: 50mA

Transition Frequency: 2GHz

Current Gain (hFE): 25 @ 3mA, 1V

Gain: 15dB

Noise Figure: 5dB @ 200MHz

Quality and Safety Features

Fully qualified to industrial standards

Robust and reliable design for long-term use

Compatibility

Compatible with standard SOT-23-3 surface mount footprint

Application Areas

RF amplifiers

RF switches

Wireless communication systems

Industrial and consumer electronics

Product Lifecycle

Currently in active production

No known plans for discontinuation

Replacement or upgrade options available as needed

Key Reasons to Choose This Product

High-performance RF characteristics

Low noise and high current gain

Compact and efficient surface mount package

Proven reliability and quality from Texas Instruments