MMBT5088LT1G - onsemi

Manufacturer Part Number

MMBT5088LT1G

Manufacturer

onsemi

Introduction

This is a single NPN bipolar junction transistor (BJT) from onsemi.

Product Features and Performance

Designed for general-purpose amplifier and switching applications

Operates at a maximum collector-emitter voltage of 30V

Handles a maximum collector current of 50mA

Provides a minimum DC current gain (hFE) of 300 at 100μA and 5V

Offers a transition frequency of 50MHz

Operates over a wide temperature range of -55°C to 150°C

Product Advantages

Small, surface-mount SOT-23-3 (TO-236) package

RoHS3 compliant

Available in tape and reel packaging

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 30V

Collector Current (IC): 50mA

Collector-Emitter Saturation Voltage (VCE(sat)): 500mV @ 1mA, 10mA

DC Current Gain (hFE): 300 (min) @ 100μA, 5V

Transition Frequency (fT): 50MHz

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality standards

Compatibility

Suitable for general-purpose amplifier and switching applications

Application Areas

General-purpose amplifier and switching circuits

Consumer electronics

Industrial controls

Product Lifecycle

This product is an active and widely available part in onsemi's portfolio.

Several Key Reasons to Choose This Product

High-performance NPN transistor with a wide operating voltage and current range

Compact surface-mount packaging for efficient board space utilization

Robust design and high reliability for demanding applications

RoHS3 compliance for environmentally-friendly use

Readily available in tape and reel packaging for efficient manufacturing