Manufacturer Part Number
MMBFJ113
Manufacturer
onsemi
Introduction
MMBFJ113 is an N-Channel JFET transistor designed for high-performance switching and amplifier applications. It is encapsulated in a compact SOT-23-3 package, suitable for surface mount technology (SMT).
Product Features and Performance
N-Channel JFET technology
Breakdown Voltage: 35 V
Drain Current (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
Voltage Cutoff (VGS off) @ Id: 500 mV @ 1 µA
Power dissipation up to 350 mW
High resistance: RDS(On) 100 Ohms
Operating Temperature range: -55°C ~ 150°C
Product Advantages
High break down voltage ensures reliability in high voltage applications.
Low cutoff voltage enhances low-power operation.
High temperature operating range ensures stability in extreme conditions.
Compact SOT-23-3 package allows for efficient use of PCB space.
Key Technical Parameters
Voltage Breakdown (V(BR)GSS): 35 V
Current Drain (Idss): 2 mA @ 15 V
Voltage Cutoff (VGS off): 500 mV @ 1 µA
Power Max: 350 mW
Resistance RDS(On): 100 Ohms
Quality and Safety Features
MMBFJ113 provides reliable operation under wide-ranging environmental conditions, ensuring both quality and safety in its applications.
Compatibility
Its SOT-23-3 package is widely compatible with standard surface mount technologies, making it suitable for a vast range of circuit boards and equipment.
Application Areas
Amplifiers
Switching circuits
Power supply circuits
Product Lifecycle
The MMBFJ113 is currently marked as Active, indicating ongoing production and availability. No discontinuation notice has been issued, ensuring continued support and availability.
Several Key Reasons to Choose This Product
High reliability and performance in switching and amplification.
Suitable for high voltage applications due to its 35 V breakdown voltage.
Low power consumption facilitated by its 500 mV cutoff voltage.
High operating temperature range ensures performance stability under tough conditions.
Its compact SOT-23-3 package makes it ideal for space-constrained applications.