Manufacturer Part Number
MMBFJ175LT1G
Manufacturer
onsemi
Introduction
The MMBFJ175LT1G is a P-Channel JFET transistor manufactured by onsemi, designed primarily for switching applications. It comes in a surface-mount SOT-23-3 package and is commonly utilized in tape and reel packaging for automated assembly processes.
Product Features and Performance
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 3 V @ 10 nA
Input Capacitance (Ciss) (Max) @ Vds: 11pF at 10V (VGS)
Resistance - RDS(On): 125 Ohms
Power - Max: 225 mW
Operating Temperature: -55°C to 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Product Advantages
High breakdown voltage of 30V allows for robust performance
Low on-resistance of 125 Ohms enables effective current control
Compact SOT-23-3 package facilitates space-saving design
Key Technical Parameters
Breakdown Voltage: 30 V
Drain Current: 7 mA
Voltage - Cutoff: 3 V
Input Capacitance: 11pF
On-Resistance: 125 Ohms
Maximum Power: 225 mW
Quality and Safety Features
Extended operating temperature range from -55°C to 150°C ensures reliability under extreme conditions
Compatibility
The surface mount SOT-23-3 package is widely compatible with standard automated assembly procedures
Application Areas
Used widely in low power applications requiring efficient switching and control
Product Lifecycle
Status: Active
The device has no indicated discontinuation and remains supported through replacements and upgrades within the onsemi product portfolio
Several Key Reasons to Choose This Product
Exceptional temperature range supporting reliability in both very low and high-temperature conditions
Efficient power handling coupled with the high breakdown voltage offers versatility in application
Compact form factor and standard packaging suitable for modern electronics design and manufacturing processes