Manufacturer Part Number
MMBFJ176
Manufacturer
onsemi
Introduction
MMBFJ176 is a P-Channel JFET transistor suited for switching and amplifier applications, highlighting its high performance in low power scenarios.
Product Features and Performance
P-Channel JFET type
Maximum power of 225 mW
Excellent for low power applications due to low drain current of 2 mA at 15 V
Breakdown Voltage of 30 V
Cutoff Voltage of 1 V @ 10 nA
High resistance at RDS(On) of 250 Ohms
Product Advantages
High thermal performance operating between -55°C to 150°C
Compact and suitable for automated surface mount assembly
Usable in high-temperature environments
Key Technical Parameters
Voltage Breakdown (V(BR)GSS): 30 V
Current Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
Voltage Cutoff (VGS off) @ Id: 1 V @ 10 nA
Resistance RDS(On): 250 Ohms
Power Max: 225 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Quality and Safety Features
Rugged design tested for high-temperature reliability
Compatibility
Ideal for integration in small-scale circuits with its SOT-23-3 device package format
Application Areas
Audio amplification systems
Signal switching circuits
Power regulation modules
Product Lifecycle
Currently active and not nearing discontinuation
Upgrades and replacements readily available given its classification and packaging type
Several Key Reasons to Choose This Product
Robust operation in a wide range of temperatures, enhancing its versatility in challenging environments
Fits comfortably in miniaturized electronics due to its compact SOT-23-3 package
Long lifecycle ensures continuous availability for ongoing and future projects
High-reliability component with comprehensive parameter availability ensuring predictable performance