MMBFJ111 - onsemi

Manufacturer Part Number

MMBFJ111

Manufacturer

onsemi

Introduction

The MMBFJ111 is an N-Channel JFET transistor designed for high-performance switching applications, packaged in a SOT-23-3 format ideal for surface mount technology.

Product Features and Performance

N-Channel FET

Voltage - Breakdown: 35 V

Current - Drain (Idss): 20 mA @ 15 V

Voltage - Cutoff (VGS off): 3 V @ 1 µA

Resistance - RDS(On): 30 Ohms

Power - Max: 350 mW

Operating Temperature Range: -55°C to 150°C

Product Advantages

High breakdown voltage

Low cutoff voltage for effective power management

Low on-state resistance enhancing efficiency

High maximum power capacity

Operates effectively across a wide temperature range

Key Technical Parameters

Breakdown Voltage: 35 V

Drain Current: 20 mA @ 15 V

Cutoff Voltage: 3 V @ 1 µA

On-Resistance: 30 Ohms

Maximum Power: 350 mW

Operating Temperature: -55°C to 150°C

Quality and Safety Features

Designed for robust performance across extreme temperature conditions

Compatibility

Compatible with surface mount technology

Package Type: SOT-23-3

Application Areas

Switching applications

Power management systems

Product Lifecycle

The product status is active, with ongoing production and availability.

Several Key Reasons to Choose This Product

High breakdown voltage facilitates reliable switching performance

Low power consumption due to efficient cutoff voltage specification

Robust physical and thermal design ensures performance across a broad temperature range

Surface mount compatibility allows easy integration into existing designs

Active product lifecycle ensures continuous availability and support