MMBFJ108 - onsemi

Manufacturer Part Number

MMBFJ108

Manufacturer

onsemi

Introduction

The MMBFJ108 is a small signal N-Channel JFET from onsemi, specifically designed for high-performance applications. Featuring low on-resistance and high breakdown voltage, it is optimal for switching and amplifier applications.

Product Features and Performance

N-Channel FET for efficient signal processing

High breakdown voltage of 25 V ensures robust operation under stress

Low drain current of 80 mA at 15 V for power efficiency

Voltage cutoff at 3 V allows for precise control over operating states

Minimal input capacitance

Low on-resistance of 8 Ohms for improved conductivity

Maximum power dissipation of 350 mW for sustained performance

Wide operating temperature range from -55°C to 150°C

Product Advantages

High voltage and current handling capability

Efficient power usage and low leakage

Excellent thermal performance

Enhanced signal integrity due to minimal on-resistance

Compact SOT-23-3 package suitable for high-density PCB designs

Key Technical Parameters

FET Type: N-Channel

Breakdown Voltage (V(BR)GSS): 25 V

Drain Current (Idss) @ Vds (Vgs=0): 80 mA @ 15 V

Cutoff Voltage (VGS off) @ Id: 3 V @ 10 nA

On-Resistance (RDS(On)): 8 Ohms

Power (Max): 350 mW

Operating Temperature Range: -55°C to 150°C

Mounting Type: Surface Mount

Package/Case: TO-236-3, SC-59, SOT-23-3

Quality and Safety Features

Rigorous quality control for reliable operation

Compliant with industry-standard safety regulations

Compatibility

Compatible with standard surface mount processes

Versatile for integration in various circuit designs

Application Areas

Signal switching

Amplification circuits

Power management

Analog circuits

Telecommunication systems

Product Lifecycle

Status: Active

Not currently nearing discontinuation, with ongoing support and availability

Several Key Reasons to Choose This Product

High performance with low on-resistance and high breakdown voltage

Wide operating temperature range for use in extreme conditions

Efficient power consumption suitable for low-power applications

Robust package ideal for compact and high-density designs

Reliable manufacturer with proven track record in semiconductor technology