Manufacturer Part Number
MMBF170LT3G
Manufacturer
onsemi
Introduction
The MMBF170LT3G is a discrete N-Channel MOSFET transistor from onsemi. It is suitable for a variety of switching and amplification applications.
Product Features and Performance
N-Channel MOSFET transistor
Operates at up to 60V drain-source voltage
Handles up to 500mA of continuous drain current at 25°C
Low on-resistance of 5Ω @ 200mA, 10V
Input capacitance of 60pF @ 10V
Maximum power dissipation of 225mW at 25°C
Product Advantages
Compact SOT-23-3 (TO-236) surface mount package
Wide operating temperature range of -55°C to 150°C
Suitable for a variety of switching and amplification applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 60V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 5Ω @ 200mA, 10V
Continuous Drain Current (Id): 500mA @ 25°C
Input Capacitance (Ciss): 60pF @ 10V
Power Dissipation (Ptot): 225mW @ 25°C
Quality and Safety Features
Compliant with RoHS and REACH regulations
Manufactured in ISO-certified facilities for high quality and reliability
Compatibility
The MMBF170LT3G is a direct replacement for various N-Channel MOSFET transistors in similar packages and specifications.
Application Areas
Switching circuits
Amplifier circuits
General-purpose electronic applications
Product Lifecycle
The MMBF170LT3G is an active and widely available product from onsemi.
Replacement or upgraded models may become available in the future as technology advances.
Key Reasons to Choose This Product
Compact and space-saving SOT-23-3 (TO-236) package
Wide operating temperature range for versatile applications
Low on-resistance for efficient switching and amplification
Reliable and high-quality manufacturing from onsemi
Direct replacement for various N-Channel MOSFET transistors