MMBF2202PT1G - onsemi

Manufacturer Part Number

MMBF2202PT1G

Manufacturer

onsemi

Introduction

Small-signal P-channel MOSFET transistor

Designed for low-power applications

Product Features and Performance

Wide operating temperature range of -55°C to 150°C

Low on-resistance (Rds(on)) of 2.2Ω @ 200mA, 10V

Low input capacitance (Ciss) of 50pF @ 5V

Low power dissipation of 150mW (Ta)

Product Advantages

Excellent thermal performance

Reliable and stable operation

Suitable for low-power applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 20V

Gate-to-Source Voltage (Vgs): ±20V

Continuous Drain Current (Id): 300mA @ 25°C

Threshold Voltage (Vgs(th)): 2.4V @ 250μA

Drive Voltage (Max Rds(on), Min Rds(on)): 4.5V, 10V

Gate Charge (Qg): 2.7nC @ 10V

Quality and Safety Features

Meets industry-standard quality and safety requirements

Robust design for reliable operation

Compatibility

Suitable for a wide range of low-power applications

Application Areas

Portable electronics

Power management circuits

Switching circuits

Amplifier circuits

Product Lifecycle

Current product offering

Replacements and upgrades may be available

Key Reasons to Choose This Product

Excellent thermal performance for reliable operation

Low on-resistance and input capacitance for efficient power handling

Wide operating temperature range for versatile applications

Robust design for long-term reliability

Suitable for a variety of low-power electronic circuits