Manufacturer Part Number
MMBF2201NT1G
Manufacturer
onsemi
Introduction
N-Channel MOSFET Transistor
Product Features and Performance
20V Drain-Source Voltage (Vdss)
±20V Gate-Source Voltage (Vgs)
1Ω Maximum On-Resistance (Rds(on)) at 300mA, 10V
300mA Continuous Drain Current (Id) at 25°C
45pF Maximum Input Capacitance (Ciss) at 5V
150mW Maximum Power Dissipation at 25°C
-55°C to 150°C Operating Temperature Range
Product Advantages
Low On-Resistance for Efficient Power Conversion
High Switching Speed for Fast Switching Applications
Wide Operating Voltage and Temperature Range
Key Technical Parameters
MOSFET Technology
N-Channel FET Type
4V Maximum Gate Threshold Voltage (Vgs(th)) at 250μA
5V to 10V Drive Voltage Range
Quality and Safety Features
RoHS3 Compliant
SC-70-3 (SOT323) Surface Mount Packaging
Compatibility
Suitable for a Wide Range of Electronic Circuits and Applications
Application Areas
Power Management Circuits
Switching Circuits
Amplifier Circuits
General-Purpose Electronics
Product Lifecycle
Currently in Active Production
Replacement or Upgrade Options Available
Key Reasons to Choose This Product
Efficient Power Handling Capabilities
Fast Switching Performance
Wide Operational Flexibility
Reliable and Compliant Design
Availability of Replacement and Upgrade Options