MMBF170LT1G - onsemi

Manufacturer Part Number

MMBF170LT1G

Manufacturer

onsemi

Introduction

N-channel MOSFET transistor

Suitable for general purpose, low power switching and amplification applications

Product Features and Performance

60V drain-to-source voltage

±20V gate-to-source voltage

5Ω maximum on-resistance at 200mA, 10V

500mA continuous drain current at 25°C

60pF maximum input capacitance at 10V

225mW maximum power dissipation at 25°C

-55°C to 150°C operating temperature range

Product Advantages

Compact SOT-23-3 surface mount package

RoHS compliant

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 60V

Gate-to-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 5Ω @ 200mA, 10V

Drain Current (Id): 500mA @ 25°C

Input Capacitance (Ciss): 60pF @ 10V

Power Dissipation (Pd): 225mW @ 25°C

Operating Temperature: -55°C to 150°C

Quality and Safety Features

RoHS 3 compliant

Compatibility

Surface mount SOT-23-3 (TO-236) package

Application Areas

General purpose, low power switching and amplification applications

Product Lifecycle

Currently in production, no plans for discontinuation

Key Reasons to Choose

Compact surface mount package

Low on-resistance for efficient switching

Wide operating temperature range

RoHS compliance