Manufacturer Part Number
MMBF170-7-F
Manufacturer
Diodes Incorporated
Introduction
The MMBF170-7-F is a discrete N-channel MOSFET transistor manufactured by Diodes Incorporated. It is designed for a variety of general-purpose applications.
Product Features and Performance
N-channel MOSFET transistor
Drain to Source Voltage (Vdss) of 60V
Maximum Gate-to-Source Voltage (Vgs) of ±20V
On-State Resistance (Rds(on)) of 5Ω at 200mA, 10V
Continuous Drain Current (Id) of 500mA at 25°C
Input Capacitance (Ciss) of 40pF at 10V
Power Dissipation (Pd) of 300mW at 25°C
Product Advantages
Suitable for a wide range of general-purpose applications
Compact SOT-23-3 surface mount package
Good thermal performance and power handling capability
Robust design and high reliability
Key Technical Parameters
MOSFET technology
N-channel enhancement mode
Threshold Voltage (Vgs(th)) of 3V at 250μA
Drive Voltage range of 4.5V to 10V
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Compatible with various general-purpose electronic circuits and applications
Application Areas
General-purpose amplifiers
Switching circuits
Power supplies
Motor control
Audio and video equipment
Telecommunications equipment
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options may be available from Diodes Incorporated or other manufacturers
Key Reasons to Choose This Product
Reliable and robust MOSFET design
Compact and space-saving SOT-23-3 package
Suitable for a wide range of general-purpose applications
Good thermal performance and power handling capability
Compliance with RoHS3 regulations
Availability and support from a reputable manufacturer, Diodes Incorporated