MC1413DR2G - onsemi

Manufacturer Part Number

MC1413DR2G

Manufacturer

onsemi

Introduction

The MC1413DR2G is a discrete semiconductor product, specifically a 7 NPN Darlington Transistor Array in a 16-SOIC package.

Product Features and Performance

7 NPN Darlington transistors in a single package

High DC current gain (hFE) of 1000 minimum at 350mA, 2V

Collector-emitter breakdown voltage of 50V

Collector current (Ic) of 500mA maximum

V_CE saturation voltage of 1.6V maximum at 500A, 350mA

Operating temperature range of up to 150°C (TJ)

Product Advantages

Space-saving 16-SOIC package

High current and voltage handling capability

Excellent current gain for amplification and switching applications

Reliable and robust construction

Key Technical Parameters

Package: 16-SOIC (0.154", 3.90mm Width)

Transistor Type: 7 NPN Darlington

DC Current Gain (hFE): 1000 minimum at 350mA, 2V

Collector-Emitter Breakdown Voltage: 50V

Collector Current (Ic): 500mA maximum

V_CE Saturation Voltage: 1.6V maximum at 500A, 350mA

Operating Temperature: 150°C (TJ) maximum

Quality and Safety Features

RoHS3 compliant for environmental responsibility

Reliable and durable construction for long-term use

Compatibility

Surface mount design for easy integration into various electronic circuits

Application Areas

Amplification and switching applications in electronic devices

Power management and control circuits

Industrial automation and control systems

Product Lifecycle

Current product, not nearing discontinuation

Replacement and upgrade options available from the manufacturer

Key Reasons to Choose This Product

High current and voltage handling capability

Excellent current gain for efficient amplification and switching

Compact and space-saving 16-SOIC package

Reliable and robust construction for long-term use

RoHS3 compliance for environmental responsibility

Compatibility with surface mount design for easy integration