MC1413DR2 - onsemi

Manufacturer Part Number

MC1413DR2

Manufacturer

onsemi

Introduction

The MC1413DR2 is a Bipolar Junction Transistor (BJT) Array featuring 7 NPN Darlington transistors.

Product Features and Performance

7 NPN Darlington transistors in a single package

High DC Current Gain (hFE) of 1000 minimum @ 350mA, 2V

Collector-Emitter Breakdown Voltage (VCEO) of 50V

Collector Current (IC) of 500mA maximum

Saturation Voltage (VCE(SAT)) of 1.6V maximum @ 500μA, 350mA

Product Advantages

Space-saving 16-SOIC package

High current gain for efficient amplification and switching

Suitable for a variety of applications requiring multiple BJT devices

Key Technical Parameters

Package: 16-SOIC

RoHS: Non-Compliant

Operating Temperature: 150°C (TJ)

Voltage Collector Emitter Breakdown (Max): 50V

Current Collector (Ic) (Max): 500mA

Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500A, 350mA

Transistor Type: 7 NPN Darlington

DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V

Quality and Safety Features

Reliable and durable construction

Meets industry standards for quality and safety

Compatibility

Compatible with a wide range of electronic circuits and systems requiring multiple BJT devices

Application Areas

Amplification and switching circuits

Driver circuits for motors, relays, and other loads

Logic and control circuits

General-purpose electronic applications

Product Lifecycle

The MC1413DR2 is an active product and is not nearing discontinuation.

Replacement or upgrade options may be available from onsemi.

Key Reasons to Choose This Product

High current gain for efficient amplification and switching

Space-saving 16-SOIC package

Suitable for a variety of applications requiring multiple BJT devices

Reliable and durable construction

Wide compatibility with electronic circuits and systems