Manufacturer Part Number
MC1413BPG
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Transistors Bipolar (BJT) Arrays
Product Features and Performance
7 NPN Darlington Transistors
High DC Current Gain (hFE) of 1000 (min) @ 350mA, 2V
Collector-Emitter Breakdown Voltage (BVCEO) of 50V (max)
Collector Current (IC) of 500mA (max)
Collector-Emitter Saturation Voltage (VCE(sat)) of 1.6V (max) @ 500mA, 350mA
Product Advantages
High current gain for efficient power amplification
Compact 16-PDIP package for space-saving designs
Reliable performance across wide temperature range up to 150°C
Key Technical Parameters
Package: 16-PDIP (0.300", 7.62mm)
Operating Temperature: -55°C to 150°C
Collector-Emitter Breakdown Voltage (BVCEO): 50V (max)
Collector Current (IC): 500mA (max)
Collector-Emitter Saturation Voltage (VCE(sat)): 1.6V (max) @ 500mA, 350mA
DC Current Gain (hFE): 1000 (min) @ 350mA, 2V
Quality and Safety Features
Reliable and robust design for industrial and commercial applications
Complies with relevant safety and quality standards
Compatibility
Through-hole mounting for easy integration into circuit boards
Application Areas
Power amplifiers
Driver circuits
Switching and control applications
Product Lifecycle
Established product, no immediate plans for discontinuation
Replacement or upgrade options available from the manufacturer
Key Reasons to Choose This Product
High current gain for efficient power amplification
Wide operating temperature range up to 150°C
Compact and space-saving 16-PDIP package
Reliable performance and quality design
Compatibility with through-hole mounting
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