MC1413BPG - onsemi

Manufacturer Part Number

MC1413BPG

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Transistors Bipolar (BJT) Arrays

Product Features and Performance

7 NPN Darlington Transistors

High DC Current Gain (hFE) of 1000 (min) @ 350mA, 2V

Collector-Emitter Breakdown Voltage (BVCEO) of 50V (max)

Collector Current (IC) of 500mA (max)

Collector-Emitter Saturation Voltage (VCE(sat)) of 1.6V (max) @ 500mA, 350mA

Product Advantages

High current gain for efficient power amplification

Compact 16-PDIP package for space-saving designs

Reliable performance across wide temperature range up to 150°C

Key Technical Parameters

Package: 16-PDIP (0.300", 7.62mm)

Operating Temperature: -55°C to 150°C

Collector-Emitter Breakdown Voltage (BVCEO): 50V (max)

Collector Current (IC): 500mA (max)

Collector-Emitter Saturation Voltage (VCE(sat)): 1.6V (max) @ 500mA, 350mA

DC Current Gain (hFE): 1000 (min) @ 350mA, 2V

Quality and Safety Features

Reliable and robust design for industrial and commercial applications

Complies with relevant safety and quality standards

Compatibility

Through-hole mounting for easy integration into circuit boards

Application Areas

Power amplifiers

Driver circuits

Switching and control applications

Product Lifecycle

Established product, no immediate plans for discontinuation

Replacement or upgrade options available from the manufacturer

Key Reasons to Choose This Product

High current gain for efficient power amplification

Wide operating temperature range up to 150°C

Compact and space-saving 16-PDIP package

Reliable performance and quality design

Compatibility with through-hole mounting