Manufacturer Part Number
MC1413BDR2G
Manufacturer
onsemi
Introduction
The MC1413BDR2G is a high-performance Darlington transistor array designed for a wide range of applications, including motor control, power switching, and logic-level translation.
Product Features and Performance
High current-handling capability of up to 500mA
High DC current gain (hFE) of 1000 or more
Low collector-emitter saturation voltage (VCE(sat)) of 1.6V
Wide operating temperature range of -55°C to 150°C
Compact 16-SOIC surface-mount package
Excellent thermal efficiency and reliability
Product Advantages
Efficient power handling and control
Versatile for various applications
Reliable and durable performance
Easy to integrate into circuit designs
Key Technical Parameters
Manufacturer Part Number: MC1413BDR2G
Voltage Collector Emitter Breakdown (Max): 50V
Current Collector (Ic) (Max): 500mA
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500A, 350mA
Transistor Type: 7 NPN Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Robust and reliable performance
Compatibility
The MC1413BDR2G is a direct replacement for various Darlington transistor arrays in the market.
Application Areas
Motor control
Power switching
Logic-level translation
Industrial automation
Appliance control
General-purpose switching
Product Lifecycle
The MC1413BDR2G is an actively supported product and is not nearing discontinuation.
Replacements and upgrades are available from onsemi.
Several Key Reasons to Choose This Product
High current-handling capability for efficient power control
Excellent thermal efficiency and reliability for long-term use
Versatile for a wide range of applications
Easy integration into circuit designs due to the compact surface-mount package
Backed by onsemi's quality and reliability standards
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