MC1413BDR2G - onsemi

Manufacturer Part Number

MC1413BDR2G

Manufacturer

onsemi

Introduction

The MC1413BDR2G is a high-performance Darlington transistor array designed for a wide range of applications, including motor control, power switching, and logic-level translation.

Product Features and Performance

High current-handling capability of up to 500mA

High DC current gain (hFE) of 1000 or more

Low collector-emitter saturation voltage (VCE(sat)) of 1.6V

Wide operating temperature range of -55°C to 150°C

Compact 16-SOIC surface-mount package

Excellent thermal efficiency and reliability

Product Advantages

Efficient power handling and control

Versatile for various applications

Reliable and durable performance

Easy to integrate into circuit designs

Key Technical Parameters

Manufacturer Part Number: MC1413BDR2G

Voltage Collector Emitter Breakdown (Max): 50V

Current Collector (Ic) (Max): 500mA

Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500A, 350mA

Transistor Type: 7 NPN Darlington

DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality standards

Robust and reliable performance

Compatibility

The MC1413BDR2G is a direct replacement for various Darlington transistor arrays in the market.

Application Areas

Motor control

Power switching

Logic-level translation

Industrial automation

Appliance control

General-purpose switching

Product Lifecycle

The MC1413BDR2G is an actively supported product and is not nearing discontinuation.

Replacements and upgrades are available from onsemi.

Several Key Reasons to Choose This Product

High current-handling capability for efficient power control

Excellent thermal efficiency and reliability for long-term use

Versatile for a wide range of applications

Easy integration into circuit designs due to the compact surface-mount package

Backed by onsemi's quality and reliability standards