Manufacturer Part Number
MC1413BDR2
Manufacturer
onsemi
Introduction
The MC1413BDR2 is a 7-element NPN Darlington transistor array from onsemi. It is designed for use in a variety of high-current switching and amplifier applications.
Product Features and Performance
7 NPN Darlington transistors in a single package
High current capability up to 500mA per transistor
High current gain of 1000 (min) at 350mA, 2V
50V collector-emitter breakdown voltage
Low saturation voltage of 1.6V @ 500mA, 350mA
Wide operating temperature range up to 150°C
Product Advantages
Compact surface mount 16-SOIC package
High power density in a small footprint
Simplified circuit design with integrated Darlington pairs
Robust performance across a wide range of conditions
Key Technical Parameters
Transistor Type: 7 NPN Darlington
Collector-Emitter Breakdown Voltage (Max): 50V
Collector Current (Max): 500mA
VCE Saturation Voltage (Max): 1.6V @ 500mA, 350mA
DC Current Gain (hFE) (Min): 1000 @ 350mA, 2V
Operating Temperature Range: -55°C to 150°C
Quality and Safety Features
RoHS non-compliant
Tape and reel packaging for automated assembly
Compatibility
The MC1413BDR2 is a direct replacement for the legacy MC1413B device, offering the same pinout and functionality.
Application Areas
High-current switching circuits
Amplifier applications
Motor control
Relay and solenoid drivers
Industrial automation and control systems
Product Lifecycle
The MC1413BDR2 is an active product and is not nearing discontinuation. Replacement or upgrade options are available from onsemi.
Key Reasons to Choose This Product
High-performance Darlington transistor array in a compact package
Excellent current handling and saturation voltage characteristics
Wide operating temperature range for reliable performance
Direct replacement for the legacy MC1413B with improved specifications
Proven reliability and quality from onsemi