Manufacturer Part Number
KSE44H11
Manufacturer
onsemi
Introduction
Discrete semiconductor product
Bipolar junction transistor (BJT), single
Product Features and Performance
RoHS3 compliant
TO-220-3 package
Operating temperature up to 150°C
Power rating of 1.67W
Collector-emitter breakdown voltage up to 80V
Collector current up to 10A
Collector cutoff current up to 10A
Saturation voltage of 1V @ 400mA, 8A
DC current gain of 60 min @ 2A, 1V
Transition frequency of 50MHz
Product Advantages
High current handling capability
Reliable performance in high-temperature applications
Suitable for power amplifier and switching circuits
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 80V
Current Collector (Ic) (Max): 10A
Current Collector Cutoff (Max): 10A
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency Transition: 50MHz
Quality and Safety Features
RoHS3 compliant
Robust TO-220-3 package
Compatibility
Through-hole mounting
Application Areas
Power amplifiers
Switching circuits
High-current, high-temperature applications
Product Lifecycle
Current product offering, no indication of discontinuation
Several Key Reasons to Choose This Product
High current handling capability up to 10A
Reliable performance at high temperatures up to 150°C
Suitable for power amplifier and switching applications
RoHS3 compliance for environmental friendliness
Through-hole mounting for easy integration
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