KSE3055T - Fairchild Semiconductor

Manufacturer Part Number

KSE3055T

Manufacturer

Fairchild (onsemi)

Introduction

High-power, high-frequency NPN silicon transistor for switching and amplifier applications.

Product Features and Performance

High power handling capacity up to 600 mW

High collector-emitter breakdown voltage of 60 V

High collector current of up to 10 A

High DC current gain (hFE) of 20 min. @ 4A, 4V

High transition frequency of 2 MHz

Suitable for switching and amplifier applications

Product Advantages

Reliable and robust performance

Efficient power handling

High-speed switching capability

Compact TO-220-3 package

Key Technical Parameters

Power Rating: 600 mW

Collector-Emitter Breakdown Voltage: 60 V

Collector Current (Max): 10 A

Collector Cutoff Current (Max): 700 μA

Saturation Voltage (Vce Sat): 8 V @ 3.3A, 10A

DC Current Gain (hFE): 20 min. @ 4A, 4V

Transition Frequency: 2 MHz

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality standards

Compatibility

Suitable for through-hole mounting on PCBs

Application Areas

Switching power supplies

Motor drives

Industrial control circuits

Audio amplifiers

Radio frequency (RF) circuits

Product Lifecycle

Currently in active production

Replacement or upgrade options available if needed

Key Reasons to Choose This Product

Reliable and robust performance for high-power applications

Efficient power handling with high voltage and current capabilities

High-speed switching capability for fast-paced circuits

Compact and easy-to-use TO-220-3 package

RoHS compliance for environmentally-friendly use