Manufacturer Part Number
KSE350STU
Manufacturer
onsemi
Introduction
The KSE350STU is a high-voltage, high-power PNP bipolar junction transistor (BJT) that is suitable for a variety of power electronics and industrial applications.
Product Features and Performance
Capable of operating at high voltages up to 300V
Can handle high power levels up to 20W
High current handling capability up to 500mA
High current gain of at least 30 at 50mA and 10V
Product Advantages
Robust and reliable performance
Suitable for high-voltage and high-power applications
Versatile and can be used in various power electronics circuits
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 300V
Collector Current (IC): 500mA
Collector-Base Cutoff Current (ICBO): 100μA
DC Current Gain (hFE): Minimum of 30 at 50mA, 10V
Power Dissipation: 20W
Operating Temperature Range: -55°C to 150°C
Quality and Safety Features
Compliance with industry standards for quality and reliability
Suitable for a wide range of operating conditions
Compatibility
Through-hole mounting in TO-126-3 package
Interchangeable with similar PNP BJT transistors in the same package
Application Areas
Power amplifiers
Motor control circuits
Voltage regulators
Switching circuits
Industrial electronics
Product Lifecycle
This product is currently in active production and widely available
No known plans for discontinuation or replacement at this time
Key Reasons to Choose This Product
High-voltage and high-power capabilities for demanding applications
Robust and reliable performance
Versatile and can be used in a wide range of power electronics circuits
Readily available and compatible with common transistor packages
KSE44H11TU/E44H11Fairchild (onsemi)