Manufacturer Part Number
KSE45H11TU
Manufacturer
onsemi
Introduction
High-power PNP bipolar junction transistor (BJT)
Product Features and Performance
Suitable for high-current switching and amplification applications
High power rating of 1.67W
High collector-emitter breakdown voltage of 80V
High collector current rating of 10A
Wide operating temperature range up to 150°C
Product Advantages
Robust and reliable performance
Efficient power handling
Versatile applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage (Max): 80V
Collector Current (Max): 10A
Collector Cutoff Current (Max): 10A
VCE Saturation Voltage (Max): 1V @ 400mA, 8A
DC Current Gain (hFE) (Min): 60 @ 2A, 1V
Transition Frequency: 40MHz
Quality and Safety Features
RoHS3 compliant
Housed in a TO-220-3 package for reliable performance
Compatibility
Suitable for a wide range of high-power electronic applications
Application Areas
High-power switching and amplification circuits
Industrial and automotive power electronics
Power supplies and motor control systems
Product Lifecycle
Currently in production
No known plans for discontinuation
Several Key Reasons to Choose This Product
Robust and reliable performance for high-power applications
Efficient power handling with high current and voltage ratings
Wide operating temperature range for versatile use
Compact and industry-standard TO-220-3 package
RoHS3 compliance for environmental sustainability
KSE350SEC
KSE44H11TU/E44H11Fairchild (onsemi)