Manufacturer Part Number
KSE3055T
Manufacturer
onsemi
Introduction
The KSE3055T is a high-power bipolar junction transistor (BJT) in a TO-220-3 package, designed for a variety of power control and switching applications.
Product Features and Performance
High power handling capability of up to 600 mW
High collector-emitter breakdown voltage of 60 V
High collector current rating of up to 10 A
High DC current gain (hFE) of at least 20 at 4 A and 4 V
High frequency transition of 2 MHz
Product Advantages
Robust and reliable performance
Efficient power handling and switching
Versatile in a wide range of applications
Key Technical Parameters
Operating Temperature: Up to 150°C
Collector-Emitter Breakdown Voltage (Max): 60 V
Collector Current (Max): 10 A
Collector Cutoff Current (Max): 700 μA
Collector-Emitter Saturation Voltage (Max): 8 V @ 3.3 A, 10 A
Transistor Type: NPN
Quality and Safety Features
Meets industry safety and reliability standards
Robust and durable construction
Compatibility
Suitable for a variety of power control and switching applications
Application Areas
Power supplies
Motor control
Lighting control
Industrial automation
Automotive electronics
Product Lifecycle
This product is currently in production and available for purchase.
Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
High power handling and switching capabilities
Robust and reliable performance
Versatile in a wide range of applications
Efficient power control and management
Meets industry safety and reliability standards
KSE350SEC