Manufacturer Part Number
FJV3101RMTF
Manufacturer
onsemi
Introduction
The FJV3101RMTF is a pre-biased NPN bipolar junction transistor (BJT) manufactured by onsemi. It is designed for use in a variety of electronic circuits and applications.
Product Features and Performance
High frequency operation up to 250 MHz
Low collector-emitter saturation voltage of 300 mV at 10 mA collector current
Integrated bias resistors (4.7 kΩ) for base and emitter-base
Small package size (SOT-23-3) for compact designs
RoHS-3 compliant
Product Advantages
Simplifies circuit design by integrating bias resistors
Enables high-frequency performance in compact packages
Ensures reliable operation with low saturation voltage
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 50 V
Current Collector (Ic) (Max): 100 mA
Current Collector Cutoff (Max): 100 nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10 mA, 5 V
Quality and Safety Features
RoHS-3 compliant for environmental responsibility
Reliable operation with integrated bias resistors
Compatibility
Compatible with standard SOT-23-3 package footprint
Suitable for use in a variety of electronic circuits and applications
Application Areas
Amplifiers
Switching circuits
Logic gates
Biasing circuits
Product Lifecycle
Current product offering
Replacements and upgrades may be available from onsemi
Key Reasons to Choose This Product
Integrated bias resistors simplify circuit design
High-frequency performance up to 250 MHz
Low saturation voltage for efficient operation
Small package size for compact designs
RoHS-3 compliance for environmental responsibility
Reliable operation with onsemi quality and support