Manufacturer Part Number
FJV3102RMTF
Manufacturer
Fairchild (onsemi)
Introduction
Discrete Semiconductor Product
Transistors Bipolar (BJT) Single, Pre-Biased
Product Features and Performance
RoHS3 Compliant
SOT-23-3 (TO-236) Package
Power Max: 200 mW
Voltage Collector Emitter Breakdown (Max): 50 V
Current Collector (Ic) (Max): 100 mA
Current Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
Transistor Type: NPN Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency Transition: 250 MHz
Resistor Base (R1): 10 kOhms
Resistor Emitter Base (R2): 10 kOhms
Product Advantages
RoHS3 Compliant
Small and compact SOT-23-3 (TO-236) package
Suitable for high-frequency applications up to 250 MHz
Key Technical Parameters
Power Max: 200 mW
Voltage Collector Emitter Breakdown (Max): 50 V
Current Collector (Ic) (Max): 100 mA
Transistor Type: NPN Pre-Biased
Frequency Transition: 250 MHz
Quality and Safety Features
RoHS3 Compliant
Compatibility
Surface Mount Mounting Type
Application Areas
Suitable for high-frequency applications up to 250 MHz
Suitable for various electronic circuits and devices
Product Lifecycle
Currently available
No information on discontinuation or replacements
Several Key Reasons to Choose This Product
RoHS3 compliant for environmentally friendly use
Small and compact SOT-23-3 (TO-236) package for space-constrained applications
Suitable for high-frequency applications up to 250 MHz
Provides pre-biased NPN transistor functionality
FJV3102RMTFonsemiSMALL SIGNAL BIPOLAR TRANSISTOR,