FJV3109RMTF - onsemi

Manufacturer Part Number

FJV3109RMTF

Manufacturer

onsemi

Introduction

This is a single, pre-biased NPN bipolar junction transistor (BJT) from onsemi, designed for a variety of general-purpose and switching applications.

Product Features and Performance

High transition frequency of 250 MHz

Collector-emitter breakdown voltage of 40 V

Collector current up to 100 mA

Low collector-emitter saturation voltage of 300 mV @ 1 mA, 10 mA

Integrated 4.7 kΩ base resistor

Product Advantages

Pre-biased design simplifies circuit design

Small SOT-23-3 surface-mount package

High frequency operation

Low power dissipation of 200 mW

Key Technical Parameters

Transistor Type: NPN Pre-Biased

Collector-Emitter Breakdown Voltage (Max): 40 V

Collector Current (Max): 100 mA

Collector Cutoff Current (Max): 100 nA

DC Current Gain (hFE) (Min): 100 @ 1 mA, 5 V

Transition Frequency: 250 MHz

Base Resistor: 4.7 kΩ

Quality and Safety Features

Compliant with RoHS and REACH directives

Stringent quality control and testing during manufacturing

Compatibility

Compatible with standard SOT-23-3 surface-mount PCB footprints

Application Areas

General-purpose amplifiers and switches

Biasing circuits

Logic gates

Drivers for LEDs and relays

Product Lifecycle

This product is currently in active production and widely available

Replacements and upgrades may be available in the future as technology advances

Key Reasons to Choose This Product

Pre-biased design for simplified circuit implementation

High frequency operation up to 250 MHz

Low power dissipation of 200 mW

Small surface-mount package for compact designs

Reliable and consistent quality from a reputable manufacturer